IRF9530NS

Symbol Micros: TIRF9530ns

51912

TIRF9530ns

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

Technical drawing Add to favourites

P-MOSFET 100V 14A IRF9530NSPBF, IRF9530NSTRLPBF, IRF9530NSTRRPBF

Parameters

Open channel resistance:	200mOhm
Max. power loss:	79W
Max. drain current:	14A
Case:	TO263 (D2PAK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRF9530NSTRL RoHS Case style: TO263t/r (D2PAK)  

In stock:

353 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	1,0125	0,6734	0,5581	0,5028	0,4820

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Packaging:
800 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IRF9530NSTRLPBF Case style: TO263 (D2PAK)  

External warehouse:

1570 pcs.

Quantity of pcs.	10+ (Please wait for the order confirmation)
Net price (EUR)	0,5976

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Packaging:
10

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	200mOhm
Max. power loss:	79W
Max. drain current:	14A
Case:	TO263 (D2PAK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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