IRF9910TRPBF

Symbol Micros: TIRF9910 VBS

403850

TIRF9910 VBS

Contractor Symbol:

Case : SOP08

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 20V; 12V; 4,3Ohm; 10A; 2,7W; -55°C~150°C; IRF9910TRPBF-VB; VBsemi: VBA3211;

Parameters

Open channel resistance:	1,3Ohm
Max. drain current:	10A
Max. power loss:	2,7W
Case:	SOP08
Manufacturer:	VBS
Max. drain-source voltage:	20V
Max. gate-source Voltage:	12V

All parameters

Manufacturer:: VBsemi Manufacturer part number: IRF9910TRPBF-VB RoHS Case style: SOP08t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,6895	0,4332	0,3584	0,3198	0,2994

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	1,3Ohm
Max. drain current:	10A
Max. power loss:	2,7W
Case:	SOP08
Manufacturer:	VBS
Max. drain-source voltage:	20V
Max. gate-source Voltage:	12V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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