IRF9Z24PBF

Symbol Micros: TIRF9Z24
Contractor Symbol:
Case : TO220
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P-MOSFET 11A 60V IRF9Z24 IRF9Z24PBF
Parameters
Open channel resistance: 280mOhm
Max. drain current: 11A
Max. power loss: 60W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Max. gate-source Voltage: 20V
Manufacturer:: Siliconix Manufacturer part number: IRF9Z24 RoHS Case style: TO220  
In stock:
150 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,8124 0,5147 0,4062 0,3693 0,3531
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Packaging:
50/200
Open channel resistance: 280mOhm
Max. drain current: 11A
Max. power loss: 60W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Max. gate-source Voltage: 20V
Transistor type: P-MOSFET
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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