IRF9Z24PBF

Symbol Micros: TIRF9Z24
Contractor Symbol:
Case : TO220
Technical drawing Add to favourites
P-MOSFET 11A 60V IRF9Z24 IRF9Z24PBF
Parameters
Open channel resistance: 280mOhm
Max. drain current: 11A
Max. power loss: 60W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRF9Z24 RoHS Case style: TO220  
In stock:
150 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,8327 0,5275 0,4163 0,3785 0,3619
Add to comparison tool
Packaging:
50/200
Open channel resistance: 280mOhm
Max. drain current: 11A
Max. power loss: 60W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols