IRF9Z34NS smd

Symbol Micros: TIRF9Z34ns

28388

TIRF9Z34ns

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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P-MOSFET 19A 55V 68W 0.032Ω IRF9Z34NS IRF9Z34NSPBF IRF9Z34NSTRRPBF IRF9Z34NSTRLPBF

Parameters

Open channel resistance:	100mOhm
Max. drain current:	19A
Max. power loss:	68W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	55V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRF9Z34NSTR RoHS Case style: TO263 (D2PAK)  

In stock:

345 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	1,0799	0,7184	0,5939	0,5352	0,5141

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Packaging:
800 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	100mOhm
Max. drain current:	19A
Max. power loss:	68W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	55V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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