IRFB11N50A

Symbol Micros: TIRFB11n50a

43048

TIRFB11n50a

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 500V 11A 170W 0.520Ω

Parameters

Open channel resistance:	520mOhm
Max. drain current:	11A
Max. power loss:	170W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: IRFB11N50A RoHS Case style: TO220 Datasheet

In stock:

4 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,5604	1,1921	0,9867	0,8640	0,8215

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Packaging:
50/200 Quantity (multiple: 1)

- +

Manufacturer:: Siliconix Manufacturer part number: IRFB11N50APBF RoHS Case style: TO220  

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,5604	1,1921	0,9867	0,8640	0,8215

Add to comparison tool Add inquiry (RFQ)

Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: Vishay Manufacturer part number: IRFB11N50APBF Case style: TO220  

External warehouse:

500 pcs.

Quantity of pcs.	25+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,9573

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Packaging:
25

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Vishay Manufacturer part number: IRFB11N50APBF Case style: TO220  

External warehouse:

900 pcs.

Quantity of pcs.	200+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,8215

Add to comparison tool Add inquiry (RFQ)

Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Vishay Manufacturer part number: IRFB11N50APBF Case style: TO220  

External warehouse:

1285 pcs.

Quantity of pcs.	200+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,8215

Add to comparison tool Add inquiry (RFQ)

Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	520mOhm
Max. drain current:	11A
Max. power loss:	170W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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