IRFB11N50A

Symbol Micros: TIRFB11n50a
Contractor Symbol:
Case : TO220
N-MOSFET 500V 11A 170W 0.520Ω
Parameters
Open channel resistance: 520mOhm
Max. drain current: 11A
Max. power loss: 170W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 500V
Max. gate-source Voltage: 30V
Manufacturer:: Vishay Manufacturer part number: IRFB11N50A RoHS Case style: TO220 Datasheet
In stock:
4 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,5278 1,1673 0,9662 0,8460 0,8044
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Packaging:
50/200
Manufacturer:: Siliconix Manufacturer part number: IRFB11N50APBF RoHS Case style: TO220  
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,5278 1,1673 0,9662 0,8460 0,8044
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Packaging:
50
Manufacturer:: Vishay Manufacturer part number: IRFB11N50APBF Case style: TO220  
External warehouse:
1674 pcs.
Quantity of pcs. 1000+ (Please wait for the order confirmation)
Net price (EUR) 0,8044
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Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Vishay Manufacturer part number: IRFB11N50APBF Case style: TO220  
External warehouse:
550 pcs.
Quantity of pcs. 25+ (Please wait for the order confirmation)
Net price (EUR) 1,1951
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Packaging:
25
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 520mOhm
Max. drain current: 11A
Max. power loss: 170W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 500V
Max. gate-source Voltage: 30V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: THT