IRFB3206 TO220

Symbol Micros: TIRFB3206
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Case : TO220
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Transistor N-Channel MOSFET; 60V; 20V; 3mOhm; 210A; 300W; -55°C ~ 175°C;
Parameters
Open channel resistance: 3mOhm
Max. drain current: 210A
Max. power loss: 300W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 3mOhm
Max. drain current: 210A
Max. power loss: 300W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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