IRFB3207Z

Symbol Micros: TIRFB3207z
Contractor Symbol:
Case : TO220
Transistor N-Channel MOSFET; 75V; 20V; 4,1mOhm; 170A; 300W; -55°C ~ 175°C;
Parameters
Open channel resistance: 4,1mOhm
Max. drain current: 170A
Max. power loss: 300W
Case: TO220
Manufacturer: International Rectifier
Max. drain-source voltage: 75V
Max. gate-source Voltage: 20V
Manufacturer:: International Rectifier Manufacturer part number: IRFB3207Z RoHS Case style: TO220 Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,4917 1,1902 1,0188 0,9138 0,8772
Add to comparison tool
Packaging:
50
Manufacturer:: Infineon Manufacturer part number: IRFB3207ZPBF Case style: TO220  
External warehouse:
230 pcs.
Quantity of pcs. 10+ (Please wait for the order confirmation)
Net price (EUR) 1,3029
Add to comparison tool
Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRFB3207ZPBF Case style: TO220  
External warehouse:
600 pcs.
Quantity of pcs. 200+ (Please wait for the order confirmation)
Net price (EUR) 0,9717
Add to comparison tool
Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 4,1mOhm
Max. drain current: 170A
Max. power loss: 300W
Case: TO220
Manufacturer: International Rectifier
Max. drain-source voltage: 75V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 175°C
Mounting: THT