IRFB3307

Symbol Micros: TIRFB3307

46301

TIRFB3307

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET HEXFET 130A 75V 250W 0.0063Ω

Parameters

Open channel resistance:	6,3mOhm
Max. power loss:	250W
Max. drain current:	130A
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	75V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRFB3307PBF Case style: TO220  

External warehouse:

9900 pcs.

Quantity of pcs.	200+ (Please wait for the order confirmation)
Net price (EUR)	0,7685

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Packaging:
100

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	6,3mOhm
Max. power loss:	250W
Max. drain current:	130A
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	75V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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