IRFB3307

Symbol Micros: TIRFB3307
Contractor Symbol:
Case : TO220
N-MOSFET HEXFET 130A 75V 250W 0.0063Ω
Parameters
Open channel resistance: 6,3mOhm
Max. drain current: 130A
Max. power loss: 250W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 75V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 6,3mOhm
Max. drain current: 130A
Max. power loss: 250W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 75V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT