IRFB3307

Symbol Micros: TIRFB3307
Contractor Symbol:
Case : TO220
N-MOSFET HEXFET 130A 75V 250W 0.0063Ω
Parameters
Open channel resistance: 6,3mOhm
Max. drain current: 130A
Max. power loss: 250W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 75V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRFB3307PBF Case style: TO220  
External warehouse:
5898 pcs.
Quantity of pcs. 200+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,7820
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Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 6,3mOhm
Max. drain current: 130A
Max. power loss: 250W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 75V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT