IRFB3607

Symbol Micros: TIRFB3607
Contractor Symbol:
Case : TO220
Technical drawing Add to favourites
N-MOSFET HEXFET 80A 75V 140W 0.009ohm
Parameters
Open channel resistance: 9mOhm
Max. drain current: 80A
Max. power loss: 140W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 75V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRFB3607 RoHS Case style: TO220  
In stock:
934 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,1852 0,8704 0,6991 0,5996 0,5648
Add to comparison tool
Packaging:
50
Open channel resistance: 9mOhm
Max. drain current: 80A
Max. power loss: 140W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 75V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols