IRFB38N20D

Symbol Micros: TIRFB38n20d

46286

TIRFB38n20d

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET HEXFET 43A 200V 3.8W 0.054Ω

Parameters

Open channel resistance:	54mOhm
Max. drain current:	43A
Max. power loss:	300W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRFB38N20DPBF Case style: TO220  

External warehouse:

400 pcs.

Quantity of pcs.	50+ (Please wait for the order confirmation)
Net price (EUR)	0,7690

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Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

Manufacturer:: Infineon Manufacturer part number: IRFB38N20DPBF Case style: TO220  

External warehouse:

110 pcs.

Quantity of pcs.	10+ (Please wait for the order confirmation)
Net price (EUR)	1,2202

Add to comparison tool Add inquiry (RFQ)

Packaging:
10

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	54mOhm
Max. drain current:	43A
Max. power loss:	300W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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