IRFB38N20D

Symbol Micros: TIRFB38n20d
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Case : TO220
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N-MOSFET HEXFET 43A 200V 3.8W 0.054Ω
Parameters
Open channel resistance: 54mOhm
Max. drain current: 43A
Max. power loss: 300W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 54mOhm
Max. drain current: 43A
Max. power loss: 300W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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