IRFB4110

Symbol Micros: TIRFB4110
Contractor Symbol:
Case : TO220
Tranzystor N-Channel MOSFET; 100V; 20V; 4,5mOhm; 180A; 370W; -55°C ~ 175°C; Odpowiednik: IRFB4110PBF;
Parameters
Open channel resistance: 4,5mOhm
Max. drain current: 180A
Max. power loss: 370W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Max. gate-source Voltage: 20V
Manufacturer:: Infineon Manufacturer part number: IRFB4110PBF Case style: TO220  
External warehouse:
30 pcs.
Quantity of pcs. 1+ (Please wait for the order confirmation)
Net price (EUR) 2,5878
Add to comparison tool
Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRFB4110PBF Case style: TO220  
External warehouse:
1610 pcs.
Quantity of pcs. 10+ (Please wait for the order confirmation)
Net price (EUR) 1,6060
Add to comparison tool
Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRFB4110PBF Case style: TO220  
External warehouse:
4173 pcs.
Quantity of pcs. 200+ (Please wait for the order confirmation)
Net price (EUR) 1,0485
Add to comparison tool
Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
         
 
Item in delivery
Estimated date:
2027-01-31
Quantity of pcs.: 500
Open channel resistance: 4,5mOhm
Max. drain current: 180A
Max. power loss: 370W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 175°C
Mounting: THT