IRFB42N20D

Symbol Micros: TIRFB42n20d
Contractor Symbol:
Case : TO220
N-MOSFET HEXFET 44A 200V 2.4W 0.055Ω
Parameters
Open channel resistance: 55mOhm
Max. drain current: 44A
Max. power loss: 330W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 55mOhm
Max. drain current: 44A
Max. power loss: 330W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT