IRFB4310z

Symbol Micros: TIRFB4310z
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Case : TO220
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N-MOSFET HEXFET 120A 100V 250W 0.006Ω
Parameters
Open channel resistance: 6mOhm
Max. drain current: 127A
Max. power loss: 250W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 6mOhm
Max. drain current: 127A
Max. power loss: 250W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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