IRFB59N10D

Micros part number: TIRFB59n10d
Package: TO220
N-MOSFET HEXFET 59A 100V 3.8W 0.025Ω
Parameters
Open channel resistance: 25mOhm
Max. drain current: 59A
Max. power loss: 200W
Housing: TO220
Max. drain-source voltage: 100V
Producer: Infineon (IRF)
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRFB59N10D RoHS Package: TO220  
In stock:
50 pcs.
Quantity 1+ 3+ 10+ 50+ 200+
Net price (PLN) 6,4400 5,1400 4,4000 3,9500 3,7900
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Standard packaging:
50
Open channel resistance: 25mOhm
Max. drain current: 59A
Max. power loss: 200W
Housing: TO220
Max. drain-source voltage: 100V
Producer: Infineon (IRF)
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 175°C
Montage: THT