IRFB59N10D

Symbol Micros: TIRFB59n10d
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Case : TO220
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N-MOSFET HEXFET 59A 100V 3.8W 0.025Ω
Parameters
Open channel resistance: 25mOhm
Max. drain current: 59A
Max. power loss: 200W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRFB59N10D RoHS Case style: TO220  
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,6179 1,2893 1,1041 0,9930 0,9513
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Packaging:
50
Open channel resistance: 25mOhm
Max. drain current: 59A
Max. power loss: 200W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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