IRFB59N10D

Symbol Micros: TIRFB59n10d

46299

TIRFB59n10d

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

N-MOSFET HEXFET 59A 100V 3.8W 0.025Ω

Parameters

Open channel resistance:	25mOhm
Max. drain current:	59A
Max. power loss:	200W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRFB59N10D RoHS Case style: TO220  

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,6643	1,2713	1,0512	0,9210	0,8760

Add to comparison tool Add inquiry (RFQ)

Packaging:
50 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	25mOhm
Max. drain current:	59A
Max. power loss:	200W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.