IRFBC20

Symbol Micros: TIRFBC20

13770

TIRFBC20

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

N-MOSFET 2.2A 600V 50W 4.4Ω

Parameters

Open channel resistance:	4,4Ohm
Max. drain current:	2,2A
Max. power loss:	50W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	600V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRFBC20 Case style: TO220 Datasheet

In stock:

200 pcs.

Quantity of pcs.	2+	10+	50+	100+	350+
Net price (EUR)	0,7062	0,4431	0,3462	0,3254	0,3070

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Packaging:
50/350 Quantity (multiple: 1)

- +

Manufacturer:: Vishay Manufacturer part number: IRFBC20PBF Case style: TO220  

External warehouse:

5591 pcs.

Quantity of pcs.	1000+ (Please wait for the order confirmation)
Net price (EUR)	0,3256

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Packaging:
1000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	4,4Ohm
Max. drain current:	2,2A
Max. power loss:	50W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	600V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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