IRFBC30

Symbol Micros: TIRFBC30

11149

TIRFBC30

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

N-MOSFET 3.6A 600V 74W 2.2Ω

Parameters

Open channel resistance:	2,2Ohm
Max. drain current:	3,6A
Max. power loss:	74W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRFBC30 RoHS Case style: TO220  

In stock:

281 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	0,9808	0,7204	0,5772	0,4951	0,4669

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Packaging:
50/300 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	2,2Ohm
Max. drain current:	3,6A
Max. power loss:	74W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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