IRFBC40LC

Symbol Micros: TIRFBC40lc

11427

TIRFBC40lc

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

N-MOSFET 6.2A 600V 125W 1.2Ω

Parameters

Open channel resistance:	1,2Ohm
Max. drain current:	6,2A
Max. power loss:	125W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRFBC40LC RoHS Case style: TO220  

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,1480	0,8428	0,6761	0,5799	0,5470

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	1,2Ohm
Max. drain current:	6,2A
Max. power loss:	125W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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