IRFBE20

Symbol Micros: TIRFBE20
Contractor Symbol:
Case : TO220
N-MOSFET 1.8A 800V 54W 6.5Ω
Parameters
Open channel resistance: 6,5Ohm
Max. drain current: 1,8A
Max. power loss: 54W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 800V
Max. gate-source Voltage: 20V
Manufacturer:: Siliconix Manufacturer part number: IRFBE20 RoHS Case style: TO220  
In stock:
34 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 0,9024 0,6624 0,5308 0,4547 0,4293
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Packaging:
50
Manufacturer:: Vishay Manufacturer part number: IRFBE20PBF Case style: TO220  
External warehouse:
3650 pcs.
Quantity of pcs. 1000+ (Please wait for the order confirmation)
Net price (EUR) 0,4628
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Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Vishay Manufacturer part number: IRFBE20PBF Case style: TO220  
External warehouse:
275 pcs.
Quantity of pcs. 25+ (Please wait for the order confirmation)
Net price (EUR) 0,8534
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Packaging:
25
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 6,5Ohm
Max. drain current: 1,8A
Max. power loss: 54W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 800V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: THT