IRFBE30
Symbol Micros:
TIRFBE30
Case : TO220
N-MOSFET 4.1A 800V 50W 3Ω
Parameters
| Open channel resistance: | 3Ohm |
| Max. drain current: | 4,1A |
| Max. power loss: | 125W |
| Case: | TO220 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 800V |
| Transistor type: | N-MOSFET |
Manufacturer:: Siliconix
Manufacturer part number: IRFBE30 RoHS
Case style: TO220
In stock:
58 pcs.
| Quantity of pcs. | 1+ | 5+ | 50+ | 100+ | 400+ |
|---|---|---|---|---|---|
| Net price (EUR) | 1,4764 | 1,0333 | 0,8280 | 0,8024 | 0,7767 |
Manufacturer:: Vishay
Manufacturer part number: IRFBE30PBF
Case style: TO220
External warehouse:
525 pcs.
| Quantity of pcs. | 25+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,9312 |
Manufacturer:: Vishay
Manufacturer part number: IRFBE30PBF
Case style: TO220
External warehouse:
888 pcs.
| Quantity of pcs. | 200+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,7767 |
| Open channel resistance: | 3Ohm |
| Max. drain current: | 4,1A |
| Max. power loss: | 125W |
| Case: | TO220 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 800V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | THT |
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