IRFBF30

Symbol Micros: TIRFBF30

78197

TIRFBF30

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

N-MOSFET 3.6A 900V 125W 3.7Ω

Parameters

Open channel resistance:	3,7Ohm
Max. drain current:	3,6A
Max. power loss:	125W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRFBF30 RoHS Case style: TO220  

In stock:

80 pcs.

Quantity of pcs.	1+	5+	50+	100+	400+
Net price (EUR)	1,3339	0,9352	0,7477	0,7263	0,7026

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Packaging:
50/100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	3,7Ohm
Max. drain current:	3,6A
Max. power loss:	125W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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