IRFBG20

Symbol Micros: TIRFBG20
Contractor Symbol:
Case : TO220
N-MOSFET 1.4A 1000V 54W 11Ω
Parameters
Open channel resistance: 11Ohm
Max. drain current: 1,4A
Max. power loss: 54W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 1000V
Max. gate-source Voltage: 20V
Manufacturer:: Vishay Manufacturer part number: IRFBG20 RoHS Case style: TO220 Datasheet
In stock:
20 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 0,9694 0,7109 0,5701 0,4893 0,4616
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Packaging:
50
Manufacturer:: Vishay Manufacturer part number: IRFBG20PBF Case style: TO220  
External warehouse:
3250 pcs.
Quantity of pcs. 50+ (Please wait for the order confirmation)
Net price (EUR) 0,4616
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Vishay Manufacturer part number: IRFBG20PBF Case style: TO220  
External warehouse:
275 pcs.
Quantity of pcs. 25+ (Please wait for the order confirmation)
Net price (EUR) 0,7471
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Packaging:
25
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Vishay Manufacturer part number: IRFBG20PBF Case style: TO220  
External warehouse:
1012 pcs.
Quantity of pcs. 1000+ (Please wait for the order confirmation)
Net price (EUR) 0,4789
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Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 11Ohm
Max. drain current: 1,4A
Max. power loss: 54W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 1000V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: THT