IRFBG20

Symbol Micros: TIRFBG20

77712

TIRFBG20

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 1.4A 1000V 54W 11Ω

Parameters

Open channel resistance:	11Ohm
Max. drain current:	1,4A
Max. power loss:	54W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	1000V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: IRFBG20 RoHS Case style: TO220 Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	0,9865	0,7234	0,5802	0,4979	0,4698

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	11Ohm
Max. drain current:	1,4A
Max. power loss:	54W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	1000V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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