IRFBG20

Symbol Micros: TIRFBG20
Contractor Symbol:
Case : TO220
N-MOSFET 1.4A 1000V 54W 11Ω
Parameters
Open channel resistance: 11Ohm
Max. drain current: 1,4A
Max. power loss: 54W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 1000V
Transistor type: N-MOSFET
Manufacturer:: Vishay Manufacturer part number: IRFBG20 RoHS Case style: TO220 Datasheet
In stock:
40 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 0,9724 0,7131 0,5719 0,4908 0,4631
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Packaging:
50
Open channel resistance: 11Ohm
Max. drain current: 1,4A
Max. power loss: 54W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 1000V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT