IRFBG30

Symbol Micros: TIRFBG30

35600

TIRFBG30

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 1000V; 20V; 5Ohm; 3,1A; 125W; -55°C ~ 150°C;

Parameters

Open channel resistance:	5Ohm
Max. drain current:	3,1A
Max. power loss:	125W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	1000V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: IRFBG30PBF RoHS Case style: TO220 Datasheet

In stock:

93 pcs.

Quantity of pcs.	1+	5+	50+	200+	400+
Net price (EUR)	1,5126	1,0593	0,8479	0,8080	0,7962

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Packaging:
50/200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	5Ohm
Max. drain current:	3,1A
Max. power loss:	125W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	1000V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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