IRFBG30

Symbol Micros: TIRFBG30
Contractor Symbol:
Case : TO220
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Transistor N-Channel MOSFET; 1000V; 20V; 5Ohm; 3,1A; 125W; -55°C ~ 150°C;
Parameters
Open channel resistance: 5Ohm
Max. drain current: 3,1A
Max. power loss: 125W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 1000V
Transistor type: N-MOSFET
Manufacturer:: Vishay Manufacturer part number: IRFBG30PBF RoHS Case style: TO220 Datasheet
In stock:
93 pcs.
Quantity of pcs. 1+ 5+ 50+ 200+ 400+
Net price (EUR) 1,4870 1,0414 0,8335 0,7943 0,7827
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Packaging:
50/200
Open channel resistance: 5Ohm
Max. drain current: 3,1A
Max. power loss: 125W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 1000V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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