IRFD014

Symbol Micros: TIRFD014

1785

TIRFD014

Contractor Symbol:

Case : PDIP04HVMDIP

Datasheet

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Transistor N-MOSFET; 60V; 20V; 200mOhm; 1,7A; 1,3W; -55°C ~ 175°C; Obsolete; Odpowiednik: IRFD014PBF;

Parameters

Open channel resistance:	200mOhm
Max. drain current:	1,7A
Max. power loss:	1,3W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	200mOhm
Max. drain current:	1,7A
Max. power loss:	1,3W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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