IRFD014

Symbol Micros: TIRFD014

1785

TIRFD014

Contractor Symbol:

Case : PDIP04HVMDIP

Datasheet

Technical drawing Add to favourites

N-MOSFET 1.7A 60V 1.3W 0.2Ω

Parameters

Open channel resistance:	200mOhm
Max. drain current:	1,7A
Max. power loss:	1,3W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRFD014 RoHS Case style: PDIP04HVMDIP  

In stock:

200 pcs.

Quantity of pcs.	2+	15+	100+	200+	1000+
Net price (EUR)	0,6221	0,3639	0,2934	0,2817	0,2700

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Packaging:
100/200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	200mOhm
Max. drain current:	1,7A
Max. power loss:	1,3W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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