IRFD014

Symbol Micros: TIRFD014
Contractor Symbol:
Case : PDIP04HVMDIP
Technical drawing Add to favourites
N-MOSFET 1.7A 60V 1.3W 0.2Ω
Parameters
Open channel resistance: 200mOhm
Max. drain current: 1,7A
Max. power loss: 1,3W
Case: PDIP04HVMDIP
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRFD014 RoHS Case style: PDIP04HVMDIP  
In stock:
200 pcs.
Quantity of pcs. 2+ 15+ 100+ 200+ 1000+
Net price (EUR) 0,6788 0,3995 0,3209 0,3094 0,2956
Add to comparison tool
Packaging:
100/200
Open channel resistance: 200mOhm
Max. drain current: 1,7A
Max. power loss: 1,3W
Case: PDIP04HVMDIP
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols