IRFD024

Symbol Micros: TIRFD024

34021

TIRFD024

Contractor Symbol:

Case : PDIP04HVMDIP

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 60V; 20V; 100mOhm; 2,5A; 1,3W; -55°C ~ 175°C;

Parameters

Open channel resistance:	100mOhm
Max. drain current:	2,5A
Max. power loss:	1,3W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRFD024PBF RoHS Case style: PDIP04HVMDIP  

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	0,9323	0,6845	0,5476	0,4697	0,4437

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	100mOhm
Max. drain current:	2,5A
Max. power loss:	1,3W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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