IRFD110

Symbol Micros: TIRFD110

35286

TIRFD110

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Case : PDIP04HVMDIP

Datasheet

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Transistor N-Channel MOSFET; 100V; 20V; 540mOhm; 1A; 1,3W; -55°C ~ 175°C;

Parameters

Open channel resistance:	540mOhm
Max. drain current:	1A
Max. power loss:	1,3W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	540mOhm
Max. drain current:	1A
Max. power loss:	1,3W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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