IRFD110

Symbol Micros: TIRFD110
Contractor Symbol:
Case : PDIP04HVMDIP
Transistor N-Channel MOSFET; 100V; 20V; 540mOhm; 1A; 1,3W; -55°C ~ 175°C;
Parameters
Open channel resistance: 540mOhm
Max. drain current: 1A
Max. power loss: 1,3W
Case: PDIP04HVMDIP
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 540mOhm
Max. drain current: 1A
Max. power loss: 1,3W
Case: PDIP04HVMDIP
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT