IRFD110

Symbol Micros: TIRFD110
Contractor Symbol:
Case : PDIP04HVMDIP
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Transistor N-Channel MOSFET; 100V; 20V; 540mOhm; 1A; 1,3W; -55°C ~ 175°C;
Parameters
Open channel resistance: 540mOhm
Max. drain current: 1A
Max. power loss: 1,3W
Case: PDIP04HVMDIP
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRFD110PBF RoHS Case style: PDIP04HVMDIP  
In stock:
50 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,6346 0,3984 0,3312 0,2941 0,2756
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Packaging:
100
Open channel resistance: 540mOhm
Max. drain current: 1A
Max. power loss: 1,3W
Case: PDIP04HVMDIP
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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