IRFD110
Symbol Micros:
TIRFD110
Case : PDIP04HVMDIP
Transistor N-Channel MOSFET; 100V; 20V; 540mOhm; 1A; 1,3W; -55°C ~ 175°C;
Parameters
Open channel resistance: | 540mOhm |
Max. drain current: | 1A |
Max. power loss: | 1,3W |
Case: | PDIP04HVMDIP |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Open channel resistance: | 540mOhm |
Max. drain current: | 1A |
Max. power loss: | 1,3W |
Case: | PDIP04HVMDIP |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | THT |
Add Symbol
Cancel
All Contractor Symbols