IRFD120

Symbol Micros: TIRFD120

35690

TIRFD120

Contractor Symbol:

Case : PDIP04HVMDIP

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 100V; 20V; 270mOhm; 1,3A; 1,3W; -55°C ~ 175°C;

Parameters

Open channel resistance:	270mOhm
Max. drain current:	1,3A
Max. power loss:	1,3W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRFD120 RoHS Case style: PDIP04HVMDIP  

In stock:

200 pcs.

Quantity of pcs.	2+	15+	100+	200+	1000+
Net price (EUR)	0,6241	0,3650	0,2944	0,2826	0,2708

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Packaging:
100/200 Quantity (multiple: 1)

- +

Manufacturer:: Vishay Manufacturer part number: IRFD120PBF Case style: PDIP04HVMDIP  

External warehouse:

1900 pcs.

Quantity of pcs.	50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3578

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Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	270mOhm
Max. drain current:	1,3A
Max. power loss:	1,3W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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