IRFD120

Symbol Micros: TIRFD120
Contractor Symbol:
Case : PDIP04HVMDIP
Transistor N-Channel MOSFET; 100V; 20V; 270mOhm; 1,3A; 1,3W; -55°C ~ 175°C;
Parameters
Open channel resistance: 270mOhm
Max. drain current: 1,3A
Max. power loss: 1,3W
Case: PDIP04HVMDIP
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRFD120 RoHS Case style: PDIP04HVMDIP  
In stock:
75 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,7662 0,4814 0,4004 0,3565 0,3333
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Packaging:
100
Open channel resistance: 270mOhm
Max. drain current: 1,3A
Max. power loss: 1,3W
Case: PDIP04HVMDIP
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT