IRFD123

Symbol Micros: TIRFD123

137654

TIRFD123

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Case : PDIP04HVMDIP

Datasheet

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Trans MOSFET N-CH 100V 0.6A 4-Pin HVMDIP IRFD123PBF

Parameters

Open channel resistance:	270mOhm
Max. drain current:	1,3A
Max. power loss:	1,3W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Vishay Manufacturer part number: IRFD123PBF RoHS Case style: PDIP04HVMDIP Datasheet

In stock:

68 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,7432	0,4662	0,3877	0,3439	0,3231

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	270mOhm
Max. drain current:	1,3A
Max. power loss:	1,3W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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