IRFD220

Symbol Micros: TIRFD220

28523

TIRFD220

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Case : PDIP04HVMDIP

Datasheet

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N-MOSFET 0.8A 200V 1W 0.8Ω

Parameters

Open channel resistance:	800mOhm
Max. drain current:	800mA
Max. power loss:	1W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	800mOhm
Max. drain current:	800mA
Max. power loss:	1W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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