IRFD420

Symbol Micros: TIRFD420

27824

TIRFD420

Contractor Symbol:

Case : PDIP04HVMDIP

Datasheet

Technical drawing Add to favourites

N-MOSFET 0.37A 500V 1W 3Ω IRFD420PBF

Parameters

Open channel resistance:	3Ohm
Max. drain current:	370mA
Max. power loss:	1W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRFD420 RoHS Case style: PDIP04HVMDIP  

In stock:

21 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,8381	0,5259	0,4367	0,3874	0,3639

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	3Ohm
Max. drain current:	370mA
Max. power loss:	1W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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