IRFD420

Symbol Micros: TIRFD420

27824

TIRFD420

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Case : PDIP04HVMDIP

Datasheet

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N-MOSFET 0.37A 500V 1W 3Ω IRFD420PBF

Parameters

Open channel resistance:	3Ohm
Max. drain current:	370mA
Max. power loss:	1W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	3Ohm
Max. drain current:	370mA
Max. power loss:	1W
Case:	PDIP04HVMDIP
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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