IRFH5020 

Symbol Micros: TIRFH5020

172650

TIRFH5020

Contractor Symbol:

Case : PQFN08 (6x5mm)

Datasheet

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Transistor N-Channel MOSFET; 200V; 20V; 55mOhm; 5,1A; 3,6W; -55°C~150°C; Substitute: IRFH5020TRPBF;

Parameters

Open channel resistance:	55mOhm
Max. drain current:	5,1A
Max. power loss:	3,6W
Case:	PQFN08 (6x5mm)
Manufacturer:	INFINEON
Max. drain-source voltage:	200V
Max. drain-gate voltage:	10V

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• Parameters

Open channel resistance:	55mOhm
Max. drain current:	5,1A
Max. power loss:	3,6W
Case:	PQFN08 (6x5mm)
Manufacturer:	INFINEON
Max. drain-source voltage:	200V
Max. drain-gate voltage:	10V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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