IRFH5020
Symbol Micros:
TIRFH5020
Case : PQFN08 (6x5mm)
Transistor N-Channel MOSFET; 200V; 20V; 55mOhm; 5,1A; 3,6W; -55°C~150°C; Substitute: IRFH5020TRPBF;
Parameters
| Open channel resistance: | 55mOhm |
| Max. drain current: | 5,1A |
| Max. power loss: | 3,6W |
| Case: | PQFN08 (6x5mm) |
| Manufacturer: | INFINEON |
| Max. drain-source voltage: | 200V |
| Max. drain-gate voltage: | 10V |
Manufacturer:: Infineon
Manufacturer part number: IRFH5020TRPBF
Case style: PQFN08 (6x5mm)
External warehouse:
12000 pcs.
| Quantity of pcs. | 4000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,5695 |
Manufacturer:: Infineon
Manufacturer part number: IRFH5020TRPBF
Case style: PQFN08 (6x5mm)
External warehouse:
4000 pcs.
| Quantity of pcs. | 4000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,5584 |
| Open channel resistance: | 55mOhm |
| Max. drain current: | 5,1A |
| Max. power loss: | 3,6W |
| Case: | PQFN08 (6x5mm) |
| Manufacturer: | INFINEON |
| Max. drain-source voltage: | 200V |
| Max. drain-gate voltage: | 10V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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