IRFH5302

Symbol Micros: TIRFH5302

172663

TIRFH5302

Contractor Symbol:

Case : PQFN08 (6x5mm)

Datasheet

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Trans MOSFET N-CH 30V 32A 8-Pin PQFN EP IRFH5302TRPBF

Parameters

Open channel resistance:	2,1mOhm
Max. power loss:	100W
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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• Parameters

Open channel resistance:	2,1mOhm
Max. power loss:	100W
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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