IRFH5302

Symbol Micros: TIRFH5302
Contractor Symbol:
Case : PQFN08 (6x5mm)
Trans MOSFET N-CH 30V 32A 8-Pin PQFN EP IRFH5302TRPBF
Parameters
Open channel resistance: 2,1mOhm
Max. power loss: 100W
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD
Manufacturer:: Infineon Manufacturer part number: IRFH5302TRPBF Case style: PQFN08 (6x5mm)  
External warehouse:
4000 pcs.
Quantity of pcs. 4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3658
Packaging:
4000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 2,1mOhm
Max. power loss: 100W
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD