IRFH9310 Infineon

Symbol Micros: TIRFH9310

108526

TIRFH9310

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Datasheet

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P-MOSFET 30V 4.6mΩ 3.1W IRFH9310TRPBF

Parameters

Open channel resistance:	7,1mOhm
Max. drain current:	21A
Max. power loss:	3,1W
Case:	PQFN08 (6x5mm)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	7,1mOhm
Max. drain current:	21A
Max. power loss:	3,1W
Case:	PQFN08 (6x5mm)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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