IRFR1010Z

Symbol Micros: TIRFR1010z

42985

TIRFR1010z

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Case : TO252

Datasheet

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N-MOSFET HEXFET 42A 55V 140W 0.0075Ω

Parameters

Open channel resistance:	7,5mOhm
Max. drain current:	42A
Max. power loss:	140W
Case:	TO252
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	7,5mOhm
Max. drain current:	42A
Max. power loss:	140W
Case:	TO252
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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