IRFR13N20DTRPBF

Symbol Micros: TIRFR13n20d

45095

TIRFR13n20d

Contractor Symbol:

Case : TO252

Datasheet

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Transistor N-MOSFET; 200V; 30V; 235mOhm; 13A; 110W; -55°C ~ 175°C; Replacement: IRFR13N20DTRPBF; IRFR13N20DPBF; IRFR13N20D;

Parameters

Open channel resistance:	235mOhm
Max. drain current:	13A
Max. power loss:	110W
Case:	TO252
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	235mOhm
Max. drain current:	13A
Max. power loss:	110W
Case:	TO252
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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