IRFR3410

Symbol Micros: TIRFR3410

43628

TIRFR3410

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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N-MOSFET HEXFET 31A 100V 3W 0.039Ω

Parameters

Open channel resistance:	39mOhm
Max. drain current:	31A
Max. power loss:	110W
Case:	TO252 (DPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRFR3410 RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,7541	0,4784	0,3782	0,3440	0,3281

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Packaging:
200 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IRFR3410TRPBF Case style: TO252 (DPAK)  

External warehouse:

7250 pcs.

Quantity of pcs.	50+ (Please wait for the order confirmation)
Net price (EUR)	0,4582

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Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	39mOhm
Max. drain current:	31A
Max. power loss:	110W
Case:	TO252 (DPACK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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