IRFR3411

Symbol Micros: TIRFR3411
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Case : TO252 (DPACK)
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N-MOSFET HEXFET 32A 100V 130W 0.044Ω
Parameters
Open channel resistance: 44mOhm
Max. drain current: 32A
Max. power loss: 130W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 44mOhm
Max. drain current: 32A
Max. power loss: 130W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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