G2K8P15K

Symbol Micros: TIRFR6215 GO

397078

TIRFR6215 GO

Contractor Symbol:

Case : TO252

Datasheet

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Transistor MOSFET; TO-252; P-Channel; NO ESD; -150V; -12A; 59W; -2.2V; 310mOhm IRFR6215;

Parameters

Open channel resistance:	310mOhm
Max. drain current:	12A
Max. power loss:	59W
Case:	TO252
Manufacturer:	GOFORD
Max. drain-source voltage:	150V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	310mOhm
Max. drain current:	12A
Max. power loss:	59W
Case:	TO252
Manufacturer:	GOFORD
Max. drain-source voltage:	150V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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