IRFRC20 smd

Symbol Micros: TIRFRC20

35921

TIRFRC20

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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Transistor N-Channel MOSFET; 600V; 20V; 4,4Ohm; 2A; 42W; -55°C ~ 150°C;

Product description

Parameters

Open channel resistance:	4,4Ohm
Max. drain current:	2A
Max. power loss:	42W
Case:	TO252 (DPACK)
Manufacturer:	VISHAY
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

         

 

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• Parameters
• Description

Open channel resistance:	4,4Ohm
Max. drain current:	2A
Max. power loss:	42W
Case:	TO252 (DPACK)
Manufacturer:	VISHAY
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Detailed description

Transistor type: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Power: 42W
On-state resistance: 4.4Ω
Case: TO252t/r
Mounting: SMD

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