IRFS11N50A

Symbol Micros: TIRFS11N50A
Contractor Symbol:
Case : TO263 (D2PAK)
N-MOSFET 500V 11A 170W
Parameters
Open channel resistance: 520mOhm
Max. drain current: 11A
Max. power loss: 170W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRFS11N50A RoHS Case style: TO263 (D2PAK)  
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 2,2536 1,8449 1,6094 1,4616 1,4085
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Packaging:
50/550
Manufacturer:: Vishay Manufacturer part number: IRFS11N50A RoHS Case style: TO263 (D2PAK) Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 2,2536 1,8449 1,6094 1,4616 1,4085
Add to comparison tool
Packaging:
50
Open channel resistance: 520mOhm
Max. drain current: 11A
Max. power loss: 170W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD