IRFS11N50A

Symbol Micros: TIRFS11N50A

43658

TIRFS11N50A

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 500V 11A 170W

Parameters

Open channel resistance:	520mOhm
Max. drain current:	11A
Max. power loss:	170W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Max. gate-source Voltage:	30V

All parameters

Manufacturer:: Vishay Manufacturer part number: IRFS11N50A RoHS Case style: TO263 (D2PAK) Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	2,2299	1,8255	1,5925	1,4462	1,3937

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	520mOhm
Max. drain current:	11A
Max. power loss:	170W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Max. gate-source Voltage:	30V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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