IRFS4010

Symbol Micros: TIRFS4010
Contractor Symbol:
Case : TO263t/r
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N-MOSFET 180A 100V 375W Substitute: IRFS4010TRLPBF; IRFS4010PBF-GURT; IRFS4010PBF; IRFS4010TRRPBF;
Parameters
Open channel resistance: 4,7mOhm
Max. drain current: 180A
Max. power loss: 375W
Case: TO263 (D2PAK)
Manufacturer: CHINA BRAND
Max. drain-source voltage: 100V
Max. gate-source Voltage: 20V
         
 
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Open channel resistance: 4,7mOhm
Max. drain current: 180A
Max. power loss: 375W
Case: TO263 (D2PAK)
Manufacturer: CHINA BRAND
Max. drain-source voltage: 100V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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