IRFS4010

Symbol Micros: TIRFS4010
Contractor Symbol:
Case : TO263 (D2PAK)
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N-MOSFET 180A 100V 375W Substitute: IRFS4010TRLPBF; IRFS4010PBF-GURT; IRFS4010PBF; IRFS4010TRRPBF;
Parameters
Open channel resistance: 4,7mOhm
Max. drain current: 180A
Max. power loss: 375W
Case: TO263 (D2PAK)
Manufacturer: CHINA BRAND
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: import Manufacturer part number: IRFS4010TRLPBF RoHS Case style: TO263t/r (D2PAK)  
In stock:
800 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 500+
Net price (EUR) 0,9261 0,6159 0,5086 0,4596 0,4409
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Packaging:
800
Manufacturer:: Infineon Manufacturer part number: IRFS4010TRLPBF Case style: TO263 (D2PAK)  
External warehouse:
3200 pcs.
Quantity of pcs. 800+ (Please wait for the order confirmation)
Net price (EUR) 0,9397
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Packaging:
800
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRFS4010TRLPBF Case style: TO263 (D2PAK)  
External warehouse:
1010 pcs.
Quantity of pcs. 10+ (Please wait for the order confirmation)
Net price (EUR) 1,4000
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 4,7mOhm
Max. drain current: 180A
Max. power loss: 375W
Case: TO263 (D2PAK)
Manufacturer: CHINA BRAND
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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