IRFS450B TO3PF

Symbol Micros: TIRFS450B

43680

TIRFS450B

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Case : TO 3Piso (SOT199)

Datasheet

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N-MOSFET 9,6A 500V 96W

Parameters

Open channel resistance:	390mOhm
Max. drain current:	9,6A
Max. power loss:	96W
Case:	TO 3Piso (SOT199)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	390mOhm
Max. drain current:	9,6A
Max. power loss:	96W
Case:	TO 3Piso (SOT199)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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