IRFS59N10D

Symbol Micros: TIRFS59N10D

43682

TIRFS59N10D

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Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 59A 100V 3,8W

Parameters

Open channel resistance:	25mOhm
Max. drain current:	59A
Max. power loss:	200W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	25mOhm
Max. drain current:	59A
Max. power loss:	200W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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