IRFS9N60A smd

Symbol Micros: TIRFS9N60A

25520

TIRFS9N60A

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

Technical drawing Add to favourites

N-MOSFET 9.2A 600V 170W 0.75Ω

Parameters

Open channel resistance:	750mOhm
Max. drain current:	9,2A
Max. power loss:	170W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: IRFS9N60APBF Case style: TO263 (D2PAK)  

External warehouse:

1500 pcs.

Quantity of pcs.	100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,0944

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Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Vishay Manufacturer part number: IRFS9N60APBF Case style: TO263 (D2PAK)  

External warehouse:

11604 pcs.

Quantity of pcs.	350+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,0802

Add to comparison tool Add inquiry (RFQ)

Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	750mOhm
Max. drain current:	9,2A
Max. power loss:	170W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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