IRFSL11N50A

Symbol Micros: TIRFSl11n50a
Contractor Symbol:
Case : TO262
N-MOSFET 11A 500V 190W 0.55Ω
Parameters
Open channel resistance: 550mOhm
Max. drain current: 11A
Max. power loss: 190W
Case: TO262
Manufacturer: VISHAY
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 550mOhm
Max. drain current: 11A
Max. power loss: 190W
Case: TO262
Manufacturer: VISHAY
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT