IRFSL11N50A
Symbol Micros:
TIRFSl11n50a
Case : TO262
N-MOSFET 11A 500V 190W 0.55Ω
Parameters
Open channel resistance: | 550mOhm |
Max. drain current: | 11A |
Max. power loss: | 190W |
Case: | TO262 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 500V |
Transistor type: | N-MOSFET |
Open channel resistance: | 550mOhm |
Max. drain current: | 11A |
Max. power loss: | 190W |
Case: | TO262 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 500V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 30V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | THT |
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