IRFSL3207Z

Symbol Micros: TIRFSl3207z

43688

TIRFSl3207z

Contractor Symbol:

Case : TO262

Datasheet

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N-MOSFET 75V 120A 300W N-MOSFET 75V 120A 300W

Parameters

Open channel resistance:	4,1mOhm
Max. drain current:	120A
Max. power loss:	300W
Case:	TO262
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	75V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	4,1mOhm
Max. drain current:	120A
Max. power loss:	300W
Case:	TO262
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	75V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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