IRFU320

Symbol Micros: TIRFU320
Contractor Symbol:
Case : TO251 (IPACK)
N-MOSFET HEXFET 400V 3,1A 42W 1,80Ω
Parameters
Open channel resistance: 1,8Ohm
Max. drain current: 3,1A
Max. power loss: 42W
Case: TO251 (IPACK)
Manufacturer: VISHAY
Max. drain-source voltage: 400V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 1,8Ohm
Max. drain current: 3,1A
Max. power loss: 42W
Case: TO251 (IPACK)
Manufacturer: VISHAY
Max. drain-source voltage: 400V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT