IRG4BC30FD-S
Symbol Micros:
TIRG4bc30fd-s
Case : TO263 (D2PAK)
Transistor IGBT ; 600V; 20V; 31A; 120A; 100W; 3,0V~6,0V; 77nC; -55°C~150°C;
Parameters
| Gate charge: | 77nC |
| Max. dissipated power: | 100W |
| Max collector current (impulse): | 120A |
| Max. collector current: | 31A |
| Forvard volatge [Vgeth]: | 3,0V ~ 6,0V |
| Case: | TO263 (D2PAK) |
| Manufacturer: | International Rectifier |
| Gate charge: | 77nC |
| Max. dissipated power: | 100W |
| Max collector current (impulse): | 120A |
| Max. collector current: | 31A |
| Forvard volatge [Vgeth]: | 3,0V ~ 6,0V |
| Case: | TO263 (D2PAK) |
| Manufacturer: | International Rectifier |
| Operating temperature (range): | -55°C ~ 150°C |
| Collector-emitter voltage: | 600V |
| Gate-emitter voltage: | 20V |
| Mounting: | SMD |
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