IRG4BH20K-LPBF

Symbol Micros: TIRG4bh20k-L

123588

TIRG4bh20k-L

Contractor Symbol:

Case : TO262

Datasheet

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Trans IGBT Chip N-CH 1200V 11A 60000mW

Parameters

Gate charge:	43nC
Max. dissipated power:	60W
Max collector current (impulse):	22A
Max. collector current:	11A
Forvard volatge [Vgeth]:	3,5V ~ 6,5V
Case:	TO262
Manufacturer:	International Rectifier

All parameters

Manufacturer:: Infineon Manufacturer part number: IRG4BH20K-LPBF Case style: TO262  

In stock:

1 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	1,7794	1,4103	1,1988	1,1024	1,0460

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Packaging:
1 Quantity (multiple: 1)

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• Parameters

Gate charge:	43nC
Max. dissipated power:	60W
Max collector current (impulse):	22A
Max. collector current:	11A
Forvard volatge [Vgeth]:	3,5V ~ 6,5V
Case:	TO262
Manufacturer:	International Rectifier
Operating temperature (range):	-55°C ~ 150°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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