IRGB20B60PD1
Symbol Micros:
TIRGB20b60pd1
Case : TO220
40A; 600V; 215W; IGBT w/ Diode
Parameters
Gate charge: | 102nC |
Max. dissipated power: | 215W |
Max. collector current: | 40A |
Max collector current (impulse): | 80A |
Forvard volatge [Vgeth]: | 3,0V ~ 5,0V |
Case: | TO220 |
Manufacturer: | International Rectifier |
Gate charge: | 102nC |
Max. dissipated power: | 215W |
Max. collector current: | 40A |
Max collector current (impulse): | 80A |
Forvard volatge [Vgeth]: | 3,0V ~ 5,0V |
Case: | TO220 |
Manufacturer: | International Rectifier |
Collector-emitter voltage: | 600V |
Operating temperature (range): | -55°C ~ 150°C |
Gate-emitter voltage: | 20V |
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