IRGB6B60KD

Symbol Micros: TIRGB6b60Kd

112798

TIRGB6b60Kd

Contractor Symbol:

Case : TO220AB

Datasheet

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Transistor IGBT ; 600V; 20V; 18A; 26A; 90W; 3,5V~5,5V; 18,2nC; -55°C~150°C;

Parameters

Gate charge:	18,2nC
Max. dissipated power:	90W
Max collector current (impulse):	26A
Max. collector current:	18A
Forvard volatge [Vgeth]:	3,5V ~ 5,5V
Case:	TO220
Manufacturer:	International Rectifier

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• Parameters

Gate charge:	18,2nC
Max. dissipated power:	90W
Max collector current (impulse):	26A
Max. collector current:	18A
Forvard volatge [Vgeth]:	3,5V ~ 5,5V
Case:	TO220
Manufacturer:	International Rectifier
Collector-emitter voltage:	600V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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